FDC6020C |
RFQ for FDC6020C Required Field |
 |
| Technical/Catalog Information | FDC6020C |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 5.9A, 4.2A |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.9A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 677pF @ 10V |
| Power - Max | 1.2W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 8nC @ 4.5V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC6020C FDC6020C FDC6020CCT ND FDC6020CCTND FDC6020CCT |
| Product | Manufacturers | Pack | D/C |
| FDC6020C | - | SOT-6 | - |
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Typical Application |
Features |
| • DC/DC converter • Load switch • Motor Driving | • Q14.2 A, 20V. RDS(ON) = 55 mΩ @ VGS =4.5 VRDS(ON) = 82 mΩ @ VGS =2.5 V • Q25.9 A, 20V.RDS(ON) = 27 mΩ @ VGS = 4.5 VRDS(ON) = 39 mΩ @ VGS = 2.5 V • Low gate charge • High performance trench technology for extremelylow RDS(ON).• FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size |
|
Symbol |
Parameter |
Q1 |
Q2 |
Units |
|
VDSS |
Drain-Source Voltage |
20 |
20 |
V |
|
VGSS |
Gate-Source Voltage |
±12 |
±12 |
V |
|
ID, IO |
Drain Current - Continuous
- Pulsed
|
4.2 |
5.9 |
A |
|
20 |
20 | |||
|
PD |
Power Dissipation for Dual Operation (Note1a) &
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